Size dependence of III-nitride microdisk light-emitting diode characteristics
Identifieur interne : 010119 ( Main/Repository ); précédent : 010118; suivant : 010120Size dependence of III-nitride microdisk light-emitting diode characteristics
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Abstract
Individual microdisk blue-light-emitting diodes (μ-LEDs) of varying diameters from 5 to 20 μm have been fabricated from InGaN/GaN quantum wells. Size effects on the μ-LED characteristics, including I-V and L-I characteristics, have been measured. The transient behavior of the μ-LEDs has also been studied. It was found that the turn-on time is on the order of our system response (30 ps) and the turn-off time is on the order of 0.2 ns and shows a strong size dependence. The ability of two-dimensional array integration with advantages of high speed, high resolution, low temperature sensitivity, and applicability under versatile conditions make III-nitride μ-LEDs a potential candidate for light sources in short-distance optical communications. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Size dependence of III-nitride microdisk light-emitting diode characteristics</title><author><name sortKey="Jin, S X" uniqKey="Jin S">S. X. Jin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Shakya, J" uniqKey="Shakya J">J. Shakya</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Lin, J Y" uniqKey="Lin J">J. Y. Lin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Jiang, H X" uniqKey="Jiang H">H. X. Jiang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0230144</idno><date when="2001-05-28">2001-05-28</date><idno type="stanalyst">PASCAL 01-0230144 AIP</idno><idno type="RBID">Pascal:01-0230144</idno><idno type="wicri:Area/Main/Corpus">011244</idno><idno type="wicri:Area/Main/Repository">010119</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Light emitting diodes</term><term>Optical communication equipment</term><term>Size effect</term><term>Wide band gap semiconductors</term><term>quantum well devices</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560J</term><term>8535B</term><term>4279S</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Diode électroluminescente</term><term>Effet dimensionnel</term><term>Equipement télécommunication optique</term><term>Semiconducteur bande interdite large</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Individual microdisk blue-light-emitting diodes (μ-LEDs) of varying diameters from 5 to 20 μm have been fabricated from InGaN/GaN quantum wells. Size effects on the μ-LED characteristics, including I-V and L-I characteristics, have been measured. The transient behavior of the μ-LEDs has also been studied. It was found that the turn-on time is on the order of our system response (30 ps) and the turn-off time is on the order of 0.2 ns and shows a strong size dependence. The ability of two-dimensional array integration with advantages of high speed, high resolution, low temperature sensitivity, and applicability under versatile conditions make III-nitride μ-LEDs a potential candidate for light sources in short-distance optical communications. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>78</s2></fA05><fA06><s2>22</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Size dependence of III-nitride microdisk light-emitting diode characteristics</s1></fA08><fA11 i1="01" i2="1"><s1>JIN (S. X.)</s1></fA11><fA11 i1="02" i2="1"><s1>SHAKYA (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>LIN (J. Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>JIANG (H. X.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>3532-3534</s1></fA20><fA21><s1>2001-05-28</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0230144</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Individual microdisk blue-light-emitting diodes (μ-LEDs) of varying diameters from 5 to 20 μm have been fabricated from InGaN/GaN quantum wells. Size effects on the μ-LED characteristics, including I-V and L-I characteristics, have been measured. The transient behavior of the μ-LEDs has also been studied. It was found that the turn-on time is on the order of our system response (30 ps) and the turn-off time is on the order of 0.2 ns and shows a strong size dependence. The ability of two-dimensional array integration with advantages of high speed, high resolution, low temperature sensitivity, and applicability under versatile conditions make III-nitride μ-LEDs a potential candidate for light sources in short-distance optical communications. © 2001 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F01</s0></fC02><fC02 i1="03" i2="X"><s0>001D04B02G</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8560J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8535B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>4279S</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Diode électroluminescente</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Light emitting diodes</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>quantum well devices</s0><s4>INC</s4></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Effet dimensionnel</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Size effect</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Equipement télécommunication optique</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Optical communication equipment</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fN21><s1>155</s1></fN21><fN47 i1="01" i2="1"><s0>0122M000074</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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